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RFL1N12 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | RFL1N12 | 1A/ 120V and 150V/ 1.9 Ohm/ N-Channel Power MOSFETs Semiconductor
RFL1N12, RFL1N15
1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching conver | Intersil Corporation |
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3 | RFL1N12L | 1A/ 120V and 150V/ 1.900 Ohm/ Logic Level/ N-Channel Power MOSFETs Semiconductor
RFL1N12L, RFL1N15L
1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) dr | Intersil Corporation |
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2 | RFL1N12L | Trans MOSFET N-CH 120V 1A 3-Pin TO-205AF | New Jersey Semiconductor |
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1 | RFL1N12 | 1A 120V AND 150V 1.9 OHM N-CHANNEL POWER MOSFETS | New Jersey Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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