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Datasheet RFLA1022 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1RFLA1022High Linearity Amplifier

RFLA1022 Low Noise, High Linearity Amplifier 400MHz to 1500MHz RFMD’s RFLA1022 is a Low Noise, High Linearity Amplifier housed in a 2.0mm x 2.0mm DFN package. The LNA features a shutdown (SD) pin that can be used to turn off the LNA. The VBIAS (VB) pin can be used to adjust the current of the LNA.
RF Micro Devices
RF Micro Devices
amplifier


RFL Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1RFL1N081A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs

Semiconductor RFL1N08, RFL1N10 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers f
Intersil Corporation
Intersil Corporation
mosfet
2RFL1N08Trans MOSFET N-CH 80V 1A 3-Pin TO-205AF

New Jersey Semiconductor
New Jersey Semiconductor
mosfet
3RFL1N08LTrans MOSFET N-CH 80V 1A 3-Pin TO-205AF

New Jersey Semiconductor
New Jersey Semiconductor
mosfet
4RFL1N101A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs

Semiconductor RFL1N08, RFL1N10 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers f
Intersil Corporation
Intersil Corporation
mosfet
5RFL1N101A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS

New Jersey Semiconductor
New Jersey Semiconductor
mosfet
6RFL1N10L1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET

RFL1N10L September 1998 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, autom
Intersil Corporation
Intersil Corporation
mosfet
7RFL1N10L1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS

New Jersey Semiconductor
New Jersey Semiconductor
mosfet



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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