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RFP50N06 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | RFP50N06 | 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet July 1999 File Number
3575.4
50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those o | Intersil Corporation |
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3 | RFP50N06 | N-Channel Power MOSFET / Transistor Data Sheet
September 2013
RFP50N06
N-Channel Power MOSFET 60V, 50A, 22 mΩ
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum | Fairchild Semiconductor |
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2 | RFP50N06LE | 50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs RFG50N06LE, RFP50N06LE, RF1S50N06LESM
Data Sheet October 1999 File Number 4072.3
50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs
These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technolo | Intersil Corporation |
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1 | RFP50N06 | Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs SEMICONDUCTOR
RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM
December 1995
50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Features
• 50A, 60V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Peak Current vs P | Harris |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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