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Datasheet RGT8BM65D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | RGT8BM65D | 650V 4A Field Stop Trench IGBT RGT8BM65D
650V 4A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 4A
1.65V 62W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss 3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
lOutline
TO-252 |
 ROHM Semiconductor |
 |
| 1 | RGT8BM65D | Field Stop Trench IGBT RGT8BM65D
650V 4A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 4A
1.65V 62W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss 3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
lOutline
TO-252 |
ROHM Semiconductor |
|
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