Datasheet RJK0329DPB Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK0329DPB	Silicon N Channel Power MOS FET Power Switching RJK0329DPB Silicon N Channel Power MOS FET Power Switching REJ03G1638-0400 Rev.4.00 Apr 10, 2008 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 mΩ typ. (at VGS = 10 V) • Pb-free • • •	Renesas Technology

RJK0329 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK0329DPB	Silicon N Channel Power MOS FET Power Switching RJK0329DPB Silicon N Channel Power MOS FET Power Switching REJ03G1638-0400 Rev.4.00 Apr 10, 2008 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 mΩ typ. (at VGS = 10 V) • P	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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