Datasheet RJK03N6DPA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK03N6DPA	Built in SBD N Channel Power MOS FET RJK03N6DPA 30V, 40A, 3.8mmax. Built in SBD N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline Preliminary Datasheet R07DS07	Renesas Technology

RJK03N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK03N6DPA	Built in SBD N Channel Power MOS FET RJK03N6DPA 30V, 40A, 3.8mmax. Built in SBD N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline Prelimina	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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