Datasheet RJK1526DPE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK1526DPE	N-Channel Power MOSFET / Transistor RJK1526DPJ, RJK1526DPE, RJK1526DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G1859-0100 Rev.1.00 Nov 06, 2009 Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code:	Renesas

RJK1526 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK1526DPJ	N-Channel Power MOSFET / Transistor RJK1526DPJ, RJK1526DPE, RJK1526DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G1859-0100 Rev.1.00 Nov 06, 2009 Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline R	Renesas
RJK1526DPF	N-Channel Power MOSFET / Transistor RJK1526DPJ, RJK1526DPE, RJK1526DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G1859-0100 Rev.1.00 Nov 06, 2009 Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline R	Renesas
RJK1526DPE	N-Channel Power MOSFET / Transistor RJK1526DPJ, RJK1526DPE, RJK1526DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G1859-0100 Rev.1.00 Nov 06, 2009 Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline R	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
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