| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | RJK5015DPM | Silicon N Channel MOS FET High Speed Power Switching RJK5015DPM Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching REJ03G1753-0100 Rev.1.00 Oct 26, 2009 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage |
 Renesas Technology |
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| Part No | Description ( Function) | Manufacturers | |
| RJK5015DPK | Silicon N Channel MOS FET High Speed Power Switching RJK5015DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. G |
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| 1N5015A | (1N5008A - 1N5042A) DIODE Free Datasheet http:/// |
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| 2N5015 | 0.5AMP HIGH VOLTAGE NPN TRANSISTOR 450 VOLTS |
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| 2N5015 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N5015 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 1000 |
 Seme LAB |
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| 2N5015 | Trans GP BJT NPN 1KV 0.5A 3-Pin TO-39 |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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