Datasheet RJK5026DPP-M0 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK5026DPP-M0	Silicon N Channel MOS FET RJK5026DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 23 G Absolute Maxim	Renesas

RJK5026DPP Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK5026DPP-E0	MOS FET Preliminary Datasheet RJK5026DPP-E0 500V - 6A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 1.35  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0608EJ0100 Rev.1.00 Jun 21, 2012 Outline RENESA	Renesas
RJK5026DPP-M0	Silicon N Channel MOS FET RJK5026DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 2	Renesas
RJK5026DPP	Silicon N Channel MOS FET High Speed Power Switching RJK5026DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1734-0100 Rev.1.00 Sep 11, 2008 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
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