Datasheet RJK6002DPE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK6002DPE	MOS FET Preliminary Datasheet RJK6002DPE 600V - 2A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting R07DS0214EJ0100 Rev.1.00 Jun 21, 2012 Outline RENESAS Package code: PRSS0004A	Renesas

RJK6002 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK6002DPD	Silicon N Channel MOS FET High Speed Power Switching RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0100 Rev.1.00 Nov 09, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A) 4 1. 2. 3	Renesas Technology
RJK6002DPH-E0	MOS FET Preliminary Datasheet RJK6002DPH-E0 600V - 2A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS1047EJ0100 Rev.1.00 Mar 21, 2013 Outline RENESAS	Renesas
RJK6002DJE	MOS FET Preliminary Datasheet RJK6002DJE 600V - 2A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0845EJ0100 Rev.1.00 Jul 05, 2011 Outline RENESAS Pa	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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