Datasheet RJK6006DPD Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK6006DPD	Silicon N Channel MOS FET High Speed Power Switching Preliminary Datasheet RJK6006DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)  High speed switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Outline RENESAS Package code	Renesas Technology

RJK6006 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK6006DPP-E0	N-Channel Power MOSFET / Transistor Preliminary Datasheet RJK6006DPP-E0 600V - 5A - MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)  High speed switching R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 Outline RENESAS Package code: P	Renesas
RJK6006DPD	Silicon N Channel MOS FET High Speed Power Switching Preliminary Datasheet RJK6006DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)  High speed switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Outline	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
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