Datasheet RJK6012DPP Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK6012DPP	N-Channel Power MOSFET / Transistor Preliminary Datasheet RJK6012DPP Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Outline RENESAS Package code: P	Renesas

RJK6012 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK6012DPP	N-Channel Power MOSFET / Transistor Preliminary Datasheet RJK6012DPP Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Outline REN	Renesas
RJK6012DPE	N-Channel Power MOSFET / Transistor Preliminary Datasheet RJK6012DPE Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0445EJ0300 (Previous: REJ03G1481-0200) Rev.3	Renesas

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