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Datasheet RJM0306JSP Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1RJM0306JSPSilicon N / P Channel Power MOS FET

www.DataSheet.co.kr Preliminary Datasheet RJM0306JSP Silicon N / P Channel Power MOS FET High Speed Power Switching Features      Two elements each of N and P channels are incorporated (suitable for H-bridge circuit) High density mounting Low on-resistance Capable of 4 V gate drive
Renesas Technology
Renesas Technology
data


RJM Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1RJM0306JSPSilicon N / P Channel Power MOS FET

www.DataSheet.co.kr Preliminary Datasheet RJM0306JSP Silicon N / P Channel Power MOS FET High Speed Power Switching Features      Two elements each of N and P channels are incorporated (suitable for H-bridge circuit) High density mounting Low on-resistance Capable of 4 V gate drive
Renesas Technology
Renesas Technology
data
2RJM0404JSCN-Channel Power MOSFET, Transistor

Preliminary Datasheet RJM0404JSC Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching Features      For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting Low on-resistance Capable of 4.5 V gate drive R07DS0338EJ0
Renesas
Renesas
mosfet
3RJM0603JSCN-Channel Power MOSFET, Transistor

Preliminary Datasheet RJM0603JSC Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching Features      For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting Low on-resistance Capable of 4.5 V gate drive R07DS0339EJ0
Renesas
Renesas
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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