Datasheet RJP30H2A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJP30H2A	Silicon N Channel IGBT Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ  High speed switching:	Renesas

RJP30 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJP30H2DPK-M0	N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180	Renesas
RJP3053DPP	IGBT April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching PDP System PDP trends Scan IC Power device High breakdown voltage Low resistance High speed switching Wid	Renesas Technology
RJP30H1DPD	N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V	Renesas

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