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Datasheet RJP60D0DPE Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | RJP60D0DPE | N-Channel IGBT Preliminary Datasheet
RJP60D0DPE
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free |
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RJP60D0 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
RJP60D0DPK | Silicon N Channel IGBT |
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RJP60D0DPM | N-Channel IGBT |
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RJP60D0DPE | N-Channel IGBT |
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Número de pieza | Descripción | Fabricantes | |
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