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RJP60D0DPM Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | RJP60D0DPM | N-Channel IGBT Preliminary Datasheet
RJP60D0DPM
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C) G | Renesas |
Numéro de référence | fiche technique | Fabricant | |
RJP60D0DPK | Silicon N Channel IGBT |
Renesas |
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RJP60D0DPM | N-Channel IGBT |
Renesas |
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RJP60D0DPE | N-Channel IGBT |
Renesas |
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RJP60D0DPP-M0 | Silicon N Channel IGBT |
Renesas Technology |
Numéro de référence | Description détaillée | Fabricant | |
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