|
|
Datasheet RJU Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
29 | RJU | Metal Oxide Resistors RJU
Vishay Dale
Metal Oxide Resistors, Special Purpose High Power, Ultra High Value
FEATURES
• Wattages to 400 watt at + 25°C • Derated to 0 at + 230°C • Voltage testing to 100KV • Tolerances: ± 1%, ± 2%, ± 5%, ± 10% • Two terminal styles, Style 3 - Tab Terminal and Style 4 Ferrule |
Vishay |
|
28 | RJU002N06 | 2.5V Drive Nch MOS FET
RJU002N06
Transistors
2.5V Drive Nch MOS FET
RJU002N06
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
UMT3
2.0
0.9
0.3
zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
0.2
0.7
(3)
1.25
(2) (1)
2.1
0.65 0.65 1.3
0.15
zApplicatio |
ROHM Semiconductor |
|
27 | RJU002N06FRA | MOSFET ( Transistor ) 2.5V Drive Nch MOSFET
RRJJUU002N06FRA
AEC-Q101 Qualified
zStructure Silicon N-channel MOS FET
zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
zApplications Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRJJUU000022NN0066FRA
Taping T1 |
ROHM Semiconductor |
|
26 | RJU003N03 | 2.5V Drive Nch MOS FET
RJU003N03
Transistors
2.5V Drive Nch MOS FET
RJU003N03
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)
ËÓÌí
îòð ðòç ðòí
øí÷
Features 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
ðòî
ðòé
øî÷
øï÷
ðòêë ðòêë |
ROHM Semiconductor |
Esta página es del resultado de búsqueda del RJU. Si pulsa el resultado de búsqueda de RJU se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |