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Datasheet RJU6054SDPK-M0 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | RJU6054SDPK-M0 | Single Diode Ultra Fast Recovery Diode Preliminary Datasheet
RJU6054SDPK-M0
Single Diode Ultra Fast Recovery Diode
Features
• Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 30 A, di/dt = 100 A/μs) • Low forward voltage: VF = 2.5 V typ. (at IF = 30 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V) R07DS0385EJ0 | Renesas | diode |
RJU Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RJU | Metal Oxide Resistors RJU
Vishay Dale
Metal Oxide Resistors, Special Purpose High Power, Ultra High Value
FEATURES
• Wattages to 400 watt at + 25°C • Derated to 0 at + 230°C • Voltage testing to 100KV • Tolerances: ± 1%, ± 2%, ± 5%, ± 10% • Two terminal styles, Style 3 - Tab Terminal and Style 4 Ferrule Vishay data | | |
2 | RJU002N06 | 2.5V Drive Nch MOS FET
RJU002N06
Transistors
2.5V Drive Nch MOS FET
RJU002N06
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
UMT3
2.0
0.9
0.3
zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
0.2
0.7
(3)
1.25
(2) (1)
2.1
0.65 0.65 1.3
0.15
zApplicatio ROHM Semiconductor data | | |
3 | RJU002N06FRA | MOSFET, Transistor 2.5V Drive Nch MOSFET
RRJJUU002N06FRA
AEC-Q101 Qualified
zStructure Silicon N-channel MOS FET
zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
zApplications Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRJJUU000022NN0066FRA
Taping T1 ROHM Semiconductor mosfet | | |
4 | RJU003N03 | 2.5V Drive Nch MOS FET
RJU003N03
Transistors
2.5V Drive Nch MOS FET
RJU003N03
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)
ËÓÌí
îòð ðòç ðòí
øí÷
Features 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
ðòî
ðòé
øî÷
øï÷
ðòêë ðòêë ROHM Semiconductor data | | |
5 | RJU003N03FRA | 2.5V Drive Nch MOSFET 2.5V Drive Nch MOSFET
RJU003N03FRA
AEC-Q101 Qualified
zStructure Silicon N-channel MOSFET
zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
zApplications Switching
zPackaging specifications and hFE
Package
Type
Code
Basic ordering unit (pieces)
RRJJUU000033NN0033FRA
Tapin ROHM Semiconductor mosfet | | |
6 | RJU3051SDPE | Ultra Fast Recovery Diode Preliminary Datasheet
RJU3051SDPE
360V - 10A - Single Diode Ultra Fast Recovery Diode
Features
• Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 10 A, di/dt = 100 A/μs) • Low forward voltage: VF = 1.4 V typ. (at IF = 10 A) • Low reverse current: IR = 1 μA max. (at VR = 360 V) R0 Renesas diode | | |
7 | RJU3052SDPD-E0 | Ultra Fast Recovery Diode Preliminary Datasheet
RJU3052SDPD-E0
360V - 20A - Single Diode Ultra Fast Recovery Diode
Features
Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 20 A, di/dt = 100 A/s) Low forward voltage: VF = 1.4 V typ. (at IF = 20 A) Low reverse current: IR = 1 A max. (at VR = 360 Renesas diode | |
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Número de pieza | Descripción | Fabricantes | |
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