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RM30TB-H Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | RM30TB-H | MEDIUM POWER GENERAL USE INSULATED TYPE MITSUBISHI DIODE MODULES
RM30TB-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
RM30TB-M,-H
DC output current ...................... 60A Repetitive peak reverse voltage ........ 400/800V • 3 phase bridge • Insulated Type • UL Recognized Yellow | Mitsubishi Electric Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
RM30TB-H | MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Semiconductor |
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RM30TB-M | MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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