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RN2909 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | RN2909 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2907~RN2909
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2907,RN2908,RN2909
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l Including two devices in US6 (ultra super mini type with 6 leads) l With | Toshiba Semiconductor |
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3 | RN2909FE | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2907FE~RN2909FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2907FE,RN2908FE,RN2909FE
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
· · Two devices are incorp | Toshiba Semiconductor |
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2 | RN2909FS | (RN2907FS - RN2909FS) Transistor Silicon PNP Epitaxial Type RN2907FS~RN2909FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2907FS,RN2908FS,RN2909FS
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
1.0±0.05
Unit: mm
• � | Toshiba |
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1 | RN2909AFS | (RN2907AFS - RN2909AFS) Transistor Silicon PNP Epitaxial Type RN2907AFS~RN2909AFS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN2907AFS, RN2908AFS, RN2909AFS
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
1.0±0.05 0.1±0. | Toshiba |
Numéro de référence | Description détaillée | Fabricant | |
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Micross |
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TDK |
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ROHM |
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