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RU1H35L PDF Datasheet

The RU1H35L is N-channel Advanced Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RU1H35L
N-Channel Advanced Power MOSFET

RU1H35L N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-252 Applications • High Speed Power Switching N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unl

Ruichips
Ruichips
pdf

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Recommended search results related to RU1H35L

Part No Description ( Function) Manufacturers PDF
RU1H35K   N-Channel Advanced Power MOSFET

RU1H35K N-Channel Advanced Power MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • High Speed Power Switching GDS T

Ruichips
Ruichips
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RU1H35Q   N-Channel Advanced Power MOSFET

RU1H35Q N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-247 Applications •Switching applicatio

Ruichips
Ruichips
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RU1H35R   N-Channel Advanced Power MOSFET

RU1H35R N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-220 Applications •Switching applicatio

Ruichips
Ruichips
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RU1H35S   N-Channel Advanced Power MOSFET

RU1H35S N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-263 Applications •Switching applicatio

Ruichips
Ruichips
datasheet pdf
0785_XP161A1355PR   Power MOSFET ( Transistor )

NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.05Ω (max) NUltra High-Speed Switching NSOT-89 Package NGate Protect Diode Built-in GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP161A1355PR is an N-Channe

Torex Semiconductor
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