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S9011 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | S9011 | NPN Transistor RoHS
S9011
S9011
F EATURE Pow er dissipation P CM:
TRANSISTOR (NPN)
TO-92
1 . EMITTER
2. BASE
0 .31 W (Tamb=25℃)
3. COLLECTOR
Co llector current I CM: 0 .03 A C ollector-base voltage V (BR)CBO: 30 V Operating and storage junction temperature | WEJ |
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1 | S9011 | NPN Silicon Epitaxial Planar Transistor BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Collec tor Current.(IC= 30mA) z Power dissipation.(PC=200mW)
Production specification
S
9011
Pb
Lead-free
APPLICATIONS
z AM converter, AM/FM if amplifier general purpose t | BL |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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