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Datasheet SUB65P06-20 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SUB65P06-20 | P-Channel MOSFET
SUP/SUB65P06-20
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
–60
rDS(on) (W)
0.020
ID (A)
–65a
TO-220AB
S
TO-263
G DRAIN connected to TAB
G D S Top View SUP65P06-20
G
D S D
Top View SUB65P06-20 P-Channel MOSFET
ABSOLUTE MAXIMUM R |  Vishay Siliconix | mosfet |
| 2 | SUB65P06-20 | P-Channel Enhancement-Mode Transistors
SUP/SUB65P06-20
P-Channel Enhancement-Mode Transistors
Product Summary
V(BR)DSS (V)
–60 TOĆ220AB TOĆ263
G DRAIN connected to TAB G D S Top View SUB65P06Ć20 D PĆChannel MOSFET
rDS(on) (W)
0.020
ID (A)
–65a
S
GD S Top View SUP65P06Ć20
Absolute Maximum Ratings (TC = 25 |  TEMIC Semiconductors | transistor |
SUB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SUB15P01-52 | P-Channel MOSFET
SUP/SUB15P01-52
Vishay Siliconix
P-Channel 8-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.052 @ VGS = –4.5 V –8 0.070 @ VGS = –2.5 V 0.105 @ VGS = –1.8 V
ID (A)
–15 –10 –10.5
TO-220AB
S
TO-263
G
DRAIN connected to TAB G G D S Top View SUP15P01- Vishay Siliconix mosfet | | |
| 2 | SUB40N06-25L | N-Channel MOSFET SUP/SUB40N06-25L
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.022 @ VGS = 10 V 0.025 @ VGS = 4.5 V
ID (A)
40 40
TO-220AB
D
TO-263
G DRAIN connected to TAB G G D S Top View SUP40N06-25L SUB40N06-25L S N-Chan Vishay Siliconix mosfet | | |
| 3 | SUB40N06-25L | Logic Level SUP/SUB40N06-25L
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.022 @ VGS = 10 V 0.025 @ VGS = 4.5 V
ID (A)
40 40
TO-220AB
D
TO-263
G DRAIN connected to TAB G G D S Top View SUP40N06-25L SUB40N06-25L S N-Chan Vishay Siliconix data | | |
| 4 | SUB45N03-13L | N-Channel MOSFET
SUB45N03-13L
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
0.013 @ VGS = 10 V 0.02 @ VGS = 4.5 V
ID (A)
45a 45a
D TrenchFETr Power MOSFETS D 175_C Junction Temperature
D
TO-263
G
G
D S
Top View S SUB45N03-13L
Vishay Siliconix mosfet | | |
| 5 | SUB60N06-18 | N-Channel MOSFET
SUP/SUB60N06-18
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.018
ID (A)
60
TO-220AB
D
TO-263
DRAIN connected to TAB
G
G D S Top View SUP60N06-18
G
D S S
Top View SUB60N06-18
N-Channel MOSFET
ABSOLUTE MAXIMUM RATIN Vishay Siliconix mosfet | | |
| 6 | SUB610 | Schottky Barrier Diode Semiconductor
SUB610
Schottky Barrier Diode
Features
• • • • Small SMD package & 3chip array Low reverse current: IR=1 ㎂ Max. @ VR=30V Low power rectified High reliability
Ordering Information
Type No. SUB610 Marking 61B Package Code SOT-363
Outline Dimensions
unit : mm
1.95~2.25 0.6  AUK diode | | |
| 7 | SUB65P04-15 | P-Channel MOSFET
SUP/SUB65P04-15
New Product
Vishay Siliconix
P-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
–40 0.023 @ VGS = –4.5 V –50
rDS(on) (W)
0.015 @ VGS = –10 V
ID (A)
–65
TO-220AB
S
TO-263
G
DRAIN connected to TAB G G D S Top View SUP65P04-15 SUB65P04-15 P- Vishay Siliconix mosfet | |
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