Datasheet SVD1N80F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SVD1N80F	800V N-CHANNEL MOSFET SVD1N80B/F/M/T_Datasheet 1A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N80B/F/M/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal	Silan Microelectronics

SVD1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SVD1N60D	600V N-CHANNEL MOSFET SVD1N60M/T/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improv	Silan Microelectronics
SVD1N60B	600V N-CHANNEL MOSFET SVD1N60M/T/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improv	Silan Microelectronics
SVD1N60M	600V N-CHANNEL MOSFET SVD1N60M/T/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improv	Silan Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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