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TC1101 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | TC1101 | Low Noise and Medium Power GaAs FETs TRANSCOM
TC1101
January 2002
Low Noise and Medium Power GaAs FETs
FEATURES • • • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 | Transcom |
Numéro de référence | fiche technique | Fabricant | |
TC110G11 | CMOS Gate Array |
Toshiba |
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TC110G17 | CMOS Gate Array |
Toshiba |
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TC110G14 | CMOS Gate Array |
Toshiba |
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TC110G08 | CMOS Gate Array |
Toshiba |
|
TC110G03 | CMOS Gate Array |
Toshiba |
|
TC110Gxx | CMOS Gate Array |
Toshiba |
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TC110G51 | CMOS Gate Array |
Toshiba |
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TC110G21 | CMOS Gate Array |
Toshiba |
|
TC110 | PFM/PWM Step-Up DC/DC Controller |
Microchip |
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TC110G05 | CMOS Gate Array |
Toshiba |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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