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Datasheet TJ120F06J3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | TJ120F06J3 | DC-DC Converter Applications Motor Drive Applications TJ120F06J3
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
TJ120F06J3
• • • • Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −60 V |
Toshiba Semiconductor |
TJ120F0 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TJ120F06J3 | DC-DC Converter Applications Motor Drive Applications |
Toshiba Semiconductor |
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SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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