Datasheet TJ20A10M3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TJ20A10M3	Field Effect Transistor TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI) TJ20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 50 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = �	Toshiba Semiconductor

TJ20A1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TJ20A10M3	Field Effect Transistor TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI) TJ20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 50 S (typ.) • Low leakage current: IDSS = −10	Toshiba Semiconductor

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