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Datasheet TK10A60W Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | TK10A60W | MOSFET, Transistor TK10A60W
MOSFETs Silicon N-Channel MOS (DTMOS)
TK10A60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3 |  Toshiba Semiconductor | mosfet |
| 2 | TK10A60W5 | MOSFET, Transistor TK10A60W5
MOSFETs Silicon N-Channel MOS (DTMOS)
TK10A60W5
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Fast reverse recovery time: trr = 85 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to con | Toshiba Semiconductor | mosfet |
TK1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TK100A06N1 | MOSFET, Transistor TK100A06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100A06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 Toshiba Semiconductor mosfet | | |
| 2 | TK100A08N1 | MOSFET, Transistor TK100A08N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100A08N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 Toshiba Semiconductor mosfet | | |
| 3 | TK100A10N1 | MOSFETs Silicon N-channel MOS TK100A10N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100A10N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0  Toshiba mosfet | | |
| 4 | TK100E06N1 | MOSFET, Transistor TK100E06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100E06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 Toshiba Semiconductor mosfet | | |
| 5 | TK100E08N1 | MOSFET, Transistor TK100E08N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100E08N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 Toshiba Semiconductor mosfet | | |
| 6 | TK100E10N1 | MOSFET, Transistor TK100E10N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100E10N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 Toshiba Semiconductor mosfet | | |
| 7 | TK100F04K3 | Field Effect Transistor TK100F04K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK100F04K3
Swiching Regulator, DC-DC Converter Applications Motor Drive Applications
Unit: mm • • • High forward transfer admittance: |Yfs| = 174 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enha Toshiba transistor | |
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