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Datasheet UHBM45 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | UHBM45 | NPN SILICON RF POWER TRANSISTOR UHBM45
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UHBM45 is Designed for
PACKAGE STYLE .230 6L FLG FEATURES:
• • • Omnigold™ Metalization System
.040x45° 4X .025 R .115 .430 D E .125 G F H I J K L A C B 2XØ.130
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
9.0 |  Advanced Semiconductor | transistor |
UHB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | UHB10FT | Ultrafast Recovery Rectifier New Product
www.datasheet4u.com
UH10FT & UHB10FT
Vishay General Semiconductor
Ultrafast Recovery Rectifier
FEATURES • Oxide planar chip junction
TO-220AC TO-263AB K
• Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency
A
• High forward surge  Vishay Siliconix rectifier | | |
| 2 | UHB20FCT | Dual Common-Cathode Ultrafast Recovery Rectifier
UH20FCT& UHB20FCT
New Product
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Recovery Rectifier
FEATURES • Oxide planar chip junction • Ultrafast recovery times
K
TO-220AB
TO-263AB
• Soft recovery characteristics • Low switching losses, high efficiency
2 Vishay Siliconix rectifier | | |
| 3 | UHBM45 | NPN SILICON RF POWER TRANSISTOR UHBM45
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UHBM45 is Designed for
PACKAGE STYLE .230 6L FLG FEATURES:
• • • Omnigold™ Metalization System
.040x45° 4X .025 R .115 .430 D E .125 G F H I J K L A C B 2XØ.130
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
9.0 Advanced Semiconductor transistor | | |
| 4 | UHBS15-1 | NPN SILICON RF POWER TRANSISTOR UHBS15-1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UHBS15-1 is Designed for
PACKAGE STYLE .230 6L FLG
A .040x45° 4X .025 R .115 .430 D E .125 G H F C B 2XØ.130
FEATURES:
• • • Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 2.0 A 55 V Advanced Semiconductor transistor | | |
| 5 | UHBS15-2 | NPN SILICON RF POWER TRANSISTOR UHBS15-2
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UHBS15-2 is Designed for
PACKAGE STYLE .230 6L FLG
A .040x45° 4X .025 R .115 .430 D E .125 G H F C B 2XØ.130
FEATURES:
• • • Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 2.0 A 55 V Advanced Semiconductor transistor | | |
| 6 | UHBS30-1 | NPN SILICON RF POWER TRANSISTOR UHBS30-1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UHBS30-1 is Designed for
PACKAGE STYLE .230 6L FLG
A .040x45° C B 2XØ.130 4X .025 R .115 .430 D E .125 G H I L F
FEATURES:
• • • Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 9.0 A 50 V Advanced Semiconductor transistor | | |
| 7 | UHBS30-2 | NPN SILICON RF POWER TRANSISTOR UHBS30-2
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UHBS30-2 is Designed for
PACKAGE STYLE .230 6L FLG
A .040x45° 4X .025 R .115 .430 D E .125 G H F C B 2XØ.130
FEATURES:
• • • Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
I J K L Advanced Semiconductor transistor | |
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