| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | ULBM2TE | NPN SILICON RF POWER TRANSISTOR ULBM2TE NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2TE is Designed for PACKAGE STYLE TO-39GE B C ØA 45° FEATURES: • • • Omnigold™ Metalization System ØD E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O F 0.40 A 36 V 16 V 4.0 V 5 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 35 OC/W O DIM A B C D E F G H G H MINIMUM inches / mm MAX |
 Advanced Semiconductor |
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Recommended search results related to ULBM2TE |
| Part No | Description ( Function) | Manufacturers | |
| ULBM2 | NPN SILICON RF POWER TRANSISTOR ULBM2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: • • • Omnigold™ Metalization System 45° B A D C J MAXIMUM RATINGS E I IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O 0.75 A 36 V 16 V 36 V 4.0 V 5 |
Advanced Semiconductor |
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| ULBM25 | NPN SILICON RF POWER TRANSISTOR ULBM25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM25 is Designed for PACKAGE STYLE .500 6L FLG FEATURES: • • • Omnigold™ Metalization System D C A 2x ØN FULL R B E .725/18,42 F K M L MAXIMUM inches / mm MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ T |
Advanced Semiconductor |
|
| ULBM2SL | NPN SILICON RF POWER TRANSISTOR ULBM2SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2SL is Designed for PACKAGE STYLE .280 4L PILL A FEATURES: • • • Omnigold™ Metalization System ØB MAXIMUM RATINGS ØC IC VCBO VCER VCES VEBO PDISS TJ TSTG θ JC 0.75 A 36 V 16 V 36 V 4.0 V 5.0 W @ TC |
Advanced Semiconductor |
|
| ULBM2T | NPN SILICON RF POWER TRANSISTOR ULBM2T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2T is Designed for PACKAGE STYLE TO-39 B ØA 45° C FEATURES: • • • Omnigold™ Metalization System ØD E MAXIMUM RATINGS IC VCB0 VCEO VCES VEBO PDISS TJ TSTG θ JC O F 0.75 A 36 V 16 V 36 V 4.0 V 5 W @ |
Advanced Semiconductor |
|
| .4M1.36FR2 | Diode ( Rectifier ) |
 American Microsemiconductor |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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