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V60100P Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | V60100P | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.DataSheet.co.kr
New Product
V60100P
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.456 V at IF = 10 A
FEATURES
TMBS®
• Trench MOS Schottky technology • Low forward voltage drop, low | Vishay |
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1 | V60100PW | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.DataSheet.co.kr
New Product
V60100PW
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.47 V at IF = 10 A
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power lo | Vishay |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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