|
|
V8P10 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | V8P10 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier New Product
V8P10
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.466 V at IF = 4 A
TMBS® eSMP® Series
FEATURES • Very low profile - typical height of 1.1 mm
• Ideal f | Vishay |
Numéro de référence | fiche technique | Fabricant | |
V8P10 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
Vishay |
|
V8P15 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
Vishay |
|
V8P12 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
Vishay |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
|
BA6343 | Stepping motor driver |
ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
www.DataSheetWiki.com | 2020 | Contactez-nous | Link | English |