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Datasheet VB10170C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | VB10170C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB10170C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 2.5 A
TMBS ®
TO-263AB
K
2 1
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Mee |
 Vishay |
 |
| 1 | VB10170C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB10170C-E3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 2.5 A
TMBS ®
TO-263AB
K
2 1
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • |
Vishay |
|
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