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VB30100C Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | VB30100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier New Product
V30100C, VF30100C, VB30100C & VI30100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30100C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-2 | Vishay |
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1 | VB30100C-M3 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB30100C-M3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TMBS ®
TO-263AB
K
2 1
VB30100C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
Package
TO-2 | Vishay |
Numéro de référence | Description détaillée | Fabricant | |
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