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VG36643241BT-7 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | VG36643241BT-7 | CMOS Synchronous Dynamic RAM VIS
Description
Preliminary
VG3664321(4)1(2)BT CMOS Synchronous Dynamic RAM
The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with | Vanguard International Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
VG36643241BT-8 | CMOS Synchronous Dynamic RAM |
Vanguard International Semiconductor |
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VG36643241BT-7 | CMOS Synchronous Dynamic RAM |
Vanguard International Semiconductor |
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VG36643241BT-10 | CMOS Synchronous Dynamic RAM |
Vanguard International Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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TDK |
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