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Datasheet WCD8C60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | WCD8C60 | Silicon Controlled Rectifiers Features
� Repetitive Peak Off-State Voltage:600V � R.M.S On-State Current (IT(RMS)=8A) � Low On-State Voltage(1.4(Typ.)@ITM) � Isolation Voltage(VISO=1500V AC)
WCD8C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for the | Winsemi | rectifier |
2 | WCD8C60S | Silicon Controlled Rectifiers WCD8C60S
Sensitive Gate Silicon Controlled Rectifiers
Features
� Sensitive gate trigger current:IGT=200µA maximum � Low On-State Voltage :VTM=1.2(typ.) @ ITM) � Low reverse and forward blocking current:
IDRM/IRRM=1mA@TC=125℃ � Low holding current :IH=5mA maximum
General Description
Sensi | Winsemi | rectifier |
WCD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | WCD10C60 | Silicon Controlled Rectifiers Features
� Repetitive Peak Off-State Voltage:600V � R.M.S On-State Current (IT(RMS)=10A) � Low On-State Voltage(1.4V(Typ.)@ITM) � Non-isolation Type
WCD10C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for the applicatio Winsemi rectifier | | |
2 | WCD12C60 | Silicon Controlled Rectifiers Features
� Repetitive Peak Off-State Voltage:600V � R.M.S On-State Current (IT(RMS)=12A) � Low On-State Voltage(1.4V(Typ.)@ITM) � Non-isolation Type
WCD12C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for the applicatio Winsemi rectifier | | |
3 | WCD20C60 | Silicon Controlled Rectifiers Features
� Repetitive Peak Off-State Voltage:600V � R.M.S On-State Current (IT(RMS)=20A) � Low On-State Voltage(1.3V(Typ.)@ITM) � Non-isolaed Type
WCD20C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for the application Winsemi rectifier | | |
4 | WCD4C60 | Silicon Controlled Rectifiers Features
� Repetitive Peak Off-State Voltage : 600V � R.M.S On-State Current ( IT(RMS)= 4 A ) � Low On-State Voltage (1.6V(Typ.) @ ITM) � Isolation Voltage(VISO=1500V AC)
WCD4C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitab Winsemi rectifier | | |
5 | WCD4C600S | Silicon Controlled Rectifiers WCD4C60S
Silicon Controlled Rectifiers
Features
◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ Low On-State Voltage (1.6V(Typ.) @ ITM)
General Description
Sensitive gate triggering SCR is suitable for the appli cation where requiring high bidirectional b Winsemi rectifier | | |
6 | WCD4C60S | Silicon Controlled Rectifiers WCD4C60S
Silicon Controlled Rectifiers
Features
◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ Low On-State Voltage (1.6V(Typ.) @ ITM)
General Description
Sensitive gate triggering SCR is suitable for the application where requiring high bidirectional bl Winsemi rectifier | | |
7 | WCD6C60 | Silicon Controlled Rectifiers Features
� Repetitive Peak Off-State Voltage : 600V � R.M.S On-State Current ( IT(RMS)= 6 A ) � Low On-State Voltage (1.4V(Typ.) @ ITM) � Isolation Voltage(VISO=1500V AC)
WCD6C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitab Winsemi rectifier | |
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Número de pieza | Descripción | Fabricantes | |
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