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Datasheet WFF12N65S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | WFF12N65S | Power MOSFET, Transistor WFF12N65S
650V Super-Junction Power MOSFET
Features
� Ultra low Rdson � Ultra low gate charge (typ. Qg = 28nC) � 100% UIS tested � RoHS compl iant � Maximum Junction Temperature Range(150℃)
General Description
Power MOSFET is fabricated using advanced super junction technology. The resu |  Winsemi | mosfet |
WFF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | WFF | Fast Fusible Metal Film Resistors Fast Fusible Metal Film Resistors
WFF Series
Welwyn Components
• • •
Low power fusing Predictable fusing characteristics Flameproof protection
Electrical Data
WFF1/4 Power rating at 70˚ C Resistance range Limiting element voltage TCR Resistance tolerance Standard valu  Welwyn Components Limited data | | |
| 2 | WFF10N60 | N-Channel MOSFET HIGH VOLTAGE N-Channel MOSFET
WFF10N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 33nC (Typ.) □ BVDSS=600V,ID=10A □ RDS(on) :0.73 Ω (Max) @VG=10V □ 100%  Wisdom technologies mosfet | | |
| 3 | WFF10N60 | Silicon N-Channel MOSFET www.DataSheet.in
WFF10N60
Silicon N-Channel MOSFET
Features
� � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability
General Description
This Power MOS  WINSEMI SEMICONDUCTOR mosfet | | |
| 4 | WFF10N65 | Silicon N-Channel MOSFET www.DataSheet.in
F10N6 5 WF WFF 10N65
Silicon N-Channel MOSFET
Features
� � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability
General Description
This WINSEMI SEMICONDUCTOR mosfet | | |
| 5 | WFF10N65L | Silicon N-Channel MOSFET WFF10N65L Product Description
Silicon N-Channel MOSFET
Features
� 10A,650V,RDS(on)(Max1.0Ω)@VGS=10V � Ultra-low Gate charge(Typical 32nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃)
General Description
This P Winsemi mosfet | | |
| 6 | WFF1101 | (WFF1xx1) GB Directions for Use w
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| 7 | WFF1121 | (WFF1xx1) GB Directions for Use w
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BOSCH data | |
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