Datasheet WFF20N60S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	WFF20N60S	Power MOSFET ( Transistor ) WFF20N60S Silicon N-Channel MOSFET Features � Ultra low Rdson � Ultra-low Gate charge(Typical 65nC) � 100% UIS Tested � RoHS compliant General Description Winsemi Power MOSFET is fabricated using advanced super junction technology.The resulting device has extremely low on resistance,making	Winsemi

WFF20N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
WFF20N60	Power MOSFET ( Transistor ) Features � 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V � Ultra-low Gate charge(Typical 50nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFF20N60 Silicon N-Channel MOSFET General Description This Power MOSFET is produced us	Winsemi
WFF20N60S	Power MOSFET ( Transistor ) WFF20N60S Silicon N-Channel MOSFET Features � Ultra low Rdson � Ultra-low Gate charge(Typical 65nC) � 100% UIS Tested � RoHS compliant General Description Winsemi Power MOSFET is fabricated using advanced super junction technology.The resulting device has extremely low o	Winsemi

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