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WFF2N60 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
3 | WFF2N60 | N-Channel MOSFET Wisdom Semiconductor
WFF2N60
N-Channel MOSFET
Features
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RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
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2 | WFF2N60B | Power MOSFET ( Transistor ) WFF2N60B Product Description
Silicon N-Channel MOSFET
Features
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
Gen | Winsemi |
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1 | WFF2N60 | Power MOSFET ( Transistor ) WFF2N60
Silicon N-Channel MOSFET
Features
■2A,600V, RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature | Winsemi |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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