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Datasheet WMBTA42 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | WMBTA42 | NPN EPITAXIAL SILICON TRANSISTORS NPN EPITAXIAL SILICON TRANSISTORS
High Voltage Transistor Die Size 0.6*0.6mm Power Dissipation: 225mW Collector Current: Max. 500mA Bonding Pad Size Emitoe 100*100mkm Base 100*100mkm
WMBTA42
SOT— —23
*
*
* *
1. BASE
2. EMITTER
3. COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Ch |  Wing Shing Computer Components | transistor |
WMB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | WMBT3904 | NPN EPITAXIAL SILICON TRANSISTORS NPN EPITAXIAL SILICON TRANSISTORS
High Voltage Transistor
SOT— —23
WMBT3904
! !
Power Dissipation: 225mW Collector Current: Max. 0.2A
1. BASE
2. EMITTER
3. COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Limits Characteristic Symbol Test Conditions Units
MIN. 40 60 6.0 50 40 70 100 60 Wing Shing Computer Components transistor | | |
| 2 | WMBT3906 | PNP EPITAXIAL SILICON TRANSISTORS PNP EPITAXIAL SILICON TRANSISTORS
High Voltage Transistor
SOT— —23
WMBT3906
! !
Power Dissipation: 225mW Collector Current: Max. 0.2A
1. BASE 2. EMITTER 3. COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Limits Characteristic Symbol Test Conditions Units
MIN. 40 40 5.0 50 60 80 100 60 Wing Shing Computer Components transistor | | |
| 3 | WMBT5401LT1 | PNP Silicon Transistor WMBT5401LT1
PNP Silicon Transistor
1 BASE 2 EMITTER
1
COLLECTOR 3
3
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –150 –160 –5.0 –500
Unit Vdc Vdc
2
SOT– 23 (TO Wing Shing Computer Components transistor | | |
| 4 | WMBT5551LT1 | NPN Silicon Transistor WMBT5551LT1
NPN Silicon Transistor
1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value
160
180
COLLECTOR 3
3 1 2
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous
Unit Vdc Vdc Vdc mAdc
6.0 600
SOT– 23 (TO – Wing Shing Computer Components transistor | | |
| 5 | WMBTA42 | NPN EPITAXIAL SILICON TRANSISTORS NPN EPITAXIAL SILICON TRANSISTORS
High Voltage Transistor Die Size 0.6*0.6mm Power Dissipation: 225mW Collector Current: Max. 500mA Bonding Pad Size Emitoe 100*100mkm Base 100*100mkm
WMBTA42
SOT— —23
*
*
* *
1. BASE
2. EMITTER
3. COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Ch Wing Shing Computer Components transistor | | |
| 6 | WMBTA92 | NPN EPITAXIAL SILICON TRANSISTORS NPN EPITAXIAL SILICON TRANSISTORS
High Voltage Transistor
WMBTA92
SOT— —23
*
*
Die Size 0.6X0.6mm
Power Dissipation: 225mW
Collector Current : Max 500mA
1. BASE 2. EMITTER
3. COLLECTOR
* *
Bonding Pad Size Emittoe 100*100mkm base 100*100mkm
GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Ch Wing Shing Computer Components transistor | |
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