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Datasheet WNM2020 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | WNM2020 | N-Channel MOSFET WNM2020
N-Channel, 20V, 0.90A, Small Signal MOSFET
VDS (V) 20
Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V
WNM2020
Http//:www.willsemi.com
Descriptions
SOT-23
The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provid | Will Semiconductor | mosfet |
2 | WNM2020 | N-Channel MOSFET Product specification
WNM2020
N-Channel, 20V, 0.90A, Small Signal MOSFET
VDS (V) 20
Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V
Descriptions
The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
(ON)
SOT-23
technology and design to provide exce | TY Semiconductor | mosfet |
WNM Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | WNM01N10 | MOSFET, Transistor WNM01N10
Single N-Channel, 100V, 1.7A, Power MOSFET
VDS (V) 100
Typical Rds(on) (Ω) 0.235@ VGS=10V 0.255@ VGS=4.5V
Descriptions
The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This WillSEMI mosfet | | |
2 | WNM01N11 | MOSFET, Transistor WNM01N11
Single N-Channel, 110V, 1.8A, Power MOSFET
VDS (V) 110
Typical Rds(on) (Ω) 0.230@ VGS=10V 0.250@ VGS=4.5V
WNM01N11
Http://www.sh-willsemi.com
Descriptions
The WNM01N11 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellen WillSEMI mosfet | | |
3 | WNM05N60 | MOSFET, Transistor WillSEMI mosfet | | |
4 | WNM05N60F | MOSFET, Transistor WillSEMI mosfet | | |
5 | WNM07N60 | N-Channel MOSFET WNM07N60/WNM07N60F 600V N-Channel MOSFET
Description
The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, po Will Semiconductor mosfet | | |
6 | WNM07N60F | N-Channel MOSFET WNM07N60/WNM07N60F 600V N-Channel MOSFET
Description
The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, po Will Semiconductor mosfet | | |
7 | WNM07N65 | N-Channel MOSFET WNM07N65/WNM07N65F 650V N-Channel MOSFET
Description
The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, po Will Semiconductor mosfet | |
Esta página es del resultado de búsqueda del WNM2020. Si pulsa el resultado de búsqueda de WNM2020 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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