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Datasheet WNM2024 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | WNM2024 | N-Channel MOSFET WNM2024
Single N-Channel, 20V, 3.9A, Power MOSFET
VDS (V) 20
Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V
Descriptions
The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. |
 Will Semiconductor |
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| 1 | WNM2024 | N-Channel MOSFET Product specification
WNM2024
Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23
Descriptions
D
The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
(ON)
3
technology and design to provide e |
 TY Semiconductor |
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