|
|
Datasheet WNM2024 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | WNM2024 | N-Channel MOSFET WNM2024
Single N-Channel, 20V, 3.9A, Power MOSFET
VDS (V) 20
Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V
Descriptions
The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. |
Will Semiconductor |
|
1 | WNM2024 | N-Channel MOSFET Product specification
WNM2024
Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23
Descriptions
D
The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
(ON)
3
technology and design to provide e |
TY Semiconductor |
Esta página es del resultado de búsqueda del WNM2024. Si pulsa el resultado de búsqueda de WNM2024 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |