Datasheet WNM4001 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	WNM4001	Small Signal N-Channel MOSFET WNM4001 Small Signal N-Channel, 20V, 0.5A, MOSFET V(BR)DSS 20 V RDS(on) Max. 0.7ȍ@ 4.5V 0.85ȍ@ 2.5V 1.25ȍ@ 1.8V ID MAX 0.5A 0.3A 0.1A Descriptions The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) wit	Will Semiconductor

WNM4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
WNM4006	N-Channel MOSFET WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) 45 Rds(on) (ȍ) 0.126@ VGS=10V 0.142@ VGS=4.5V 0.147@ VGS=4.0V 0.208@ VGS=2.5V Descriptions The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excel	Will Semiconductor
WNM4006	N-Channel MOSFET Product specification WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.126@ VGS=10V 45 0.142@ VGS=4.5V 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 D 3 Descriptions The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technol	TY Semiconductor
WNM4002	N-Channel MOSFET WNM4002 Small Signal N-Channel, 20V, 0.3A, MOSFET V(BR)DSS 20 V RDS(on) Typ. 1.4 @ 4.5V 2.2 @ 2.5V 3.8 @ 1.8V Descriptions The WNM4002 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with	Will Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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