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Datasheet WT-Z206V-AU4 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | WT-Z206V-AU4 | Zener Diode Chips WT-Z206V-AU4
Zener Diode Chips for ESD Bidrectional Protection
1. Feature:
1-1 Silicon Zener diode chips for electrostatic discharge(ESD) protection application 1-2 This specification applies to N/P/N-Type silicon Zener diode chip(Vertical) Device NO:WT-Z206V-AU4
2. Structure:
2-1. Planar type : S |  Weitron Technology | diode |
WT- Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | WT-2300 | Surface Mount N-Channel Enhancement Mode MOSFET WT-2300
Surface Mount N-Channel Enhancement Mode MOSFET
3 DRAIN
DRAIN CURRENT 3.8 AMPERES
1
Features:
*Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V R DS(ON) <75 mΩ @VGS =1.8V *Rugged and Reliable *SOT-23 Package
DRAIN SOURCE VOLTAGE 20 V Weitron Technology mosfet | | |
| 2 | WT-2301 | Surface Mount P-Channel Enhancement Mode MOSFET WT-2301
Surface Mount P-Channel Enhancement Mode MOSFET
1 3 DRAIN
DRAIN CURRENT - 3.4 AMPERES DRAIN SOURCE V OLTAGE - 20 VOLTAGE
2
SOURCE
Features:
*Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V R DS(ON) <105 m Ω@VGS =-1.8V *Rugged and R Weitron Technology mosfet | | |
| 3 | WT-2306 | Surface Mount N-Channel Enhancement Mode MOSFET WT-2306
Surface Mount N-Channel Enhancement Mode MOSFET
1 3 DRAIN
DRAIN CURRENT 2.8 AMPERES DRAIN SOURCE V OLTAGE 20 VOLTAGE
2
SOURCE
Features:
*Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V *Rugged and Reliable *SOT-23 Package
GATE
3 1 2 Weitron Technology mosfet | | |
| 4 | WT-2307 | Surface Mount P-Channel Enhancement Mode MOSFET WT-2307
Surface Mount P-Channel Enhancement Mode MOSFET
1 3 DRAIN
DRAIN CURRENT - 3 AMPERES DRAIN SOURCE V OLTAGE - 20 VOLTAGE
2
SOURCE
Features:
*Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V *Rugged and Reliable *SOT-23 Package
GATE
Weitron Technology mosfet | | |
| 5 | WT-3401 | Surface Mount P-Channel Enhancement Mode MOSFET WT-3401
Surface Mount P-Channel Enhancement Mode MOSFET
1 3 DRAIN
DRAIN CURRENT - 3 AMPERES DRAIN SOURCE V OLTAGE - 30 VOLTAGE
2
SOURCE
Features:
*Super high dense cell design for low RDS(ON) R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V *Rugged and Reliable *SOT Weitron Technology mosfet | | |
| 6 | WT-3402 | Surface Mount N-Channel Enhancement Mode MOSFET WT-3402
Surface Mount N-Channel Enhancement Mode MOSFET
1 3 DRAIN
DRAIN CURRENT 4.6 AMPERES DRAIN SOURCE V OLTAGE 30 VOLTAGE
2
SOURCE
Features:
*Super high dense cell design for low RDS(ON) R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V *Rugged and Reliable *SOT-23 Pa Weitron Technology mosfet | | |
| 7 | WT-A521 | UHF RFID Tag RFID Solutions
Ultra-Rugged UHF RFID Tag
UHF RFID Tag
Wash, Rinse, Track, Repeat.
WT-A521/A522
Ultra-Rugged UHF RFID Tags for Commercial and Industrial Textile Applications
www.DataSheet.net/
UHF technology to read hundreds of tags simultaneously More than 6 foot reading distance Cost efficient  Fujitsu data | |
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