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WTC2301 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | WTC2301 | Enhancement Mode Power MOSFET WTC2301
P-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT -2.3 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ @V GS =-4.5V *Rugged and Reliabl | Weitron Technology |
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1 | WTC2301 | P-Channel Enhancement Mode Power MOSFET WTC2301
P-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT -2.3 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ @V GS =-4.5V *Rugged and Reliabl | Weitron Technology |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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