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Datasheet WTC6216BSI Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | WTC6216BSI | 16-channel capacitive touch sensor chip http://www.wincomtech.com
WTC6216BSI WTC6216BSI-L
WTC6216BSI 十六通道电容式触摸感应按键芯片
快速浏览
型号区分 按键数量 技术机理 按键反应模式 按键感应盘大小
按键感应盘间距 按键感应盘形状 按键感应盘材料 对 PCB 的要求 面板材质 � |  WINCOM | sensor |
| 2 | WTC6216BSI-L | 16-channel capacitive touch sensor chip http://www.wincomtech.com
WTC6216BSI WTC6216BSI-L
WTC6216BSI 十六通道电容式触摸感应按键芯片
快速浏览
型号区分 按键数量 技术机理 按键反应模式 按键感应盘大小
按键感应盘间距 按键感应盘形状 按键感应盘材料 对 PCB 的要求 面板材质 � | WINCOM | sensor |
WTC Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | WTC2301 | Enhancement Mode Power MOSFET WTC2301
P-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT -2.3 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ @V GS =-4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
2
SOU  Weitron Technology mosfet | | |
| 2 | WTC2301 | P-Channel Enhancement Mode Power MOSFET WTC2301
P-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT -2.3 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ @V GS =-4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
2
SOU Weitron Technology mosfet | | |
| 3 | WTC2302 | Enhancement Mode Power MOSFET WTC2302
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT 2.3 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
2
SOURCE
3 Weitron Technology mosfet | | |
| 4 | WTC2302 | N-Channel Enhancement Mode Power MOSFET WTC2302
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT 2.3 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
2
SOURCE
3 Weitron Technology mosfet | | |
| 5 | WTC2303 | Enhancement Mode Power MOSFET WTC2303
P-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT -1.9 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
Features:
SOURCE
2
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <240mΩ@V GS =-10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 P Weitron Technology mosfet | | |
| 6 | WTC2304 | Enhancement Mode Power MOSFET WTC2304
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT 2.7 AMPERS DRAIN SOUCE VOLTAGE 25 VOLTAGE
Features:
2 SOURCE
3 1 2
*Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V *Rugged and Reliable
Application:
*Capabl Weitron Technology mosfet | | |
| 7 | WTC2305 | Enhancement Mode Power MOSFET WTC2305
P-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOURCE
2
3 1 2
SOT-23
Weitron Technology mosfet | |
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