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PDF AP4532GM-HF Data sheet ( Hoja de datos )
| Número de pieza | AP4532GM-HF | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP4532GM-HF (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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Advanced Power
Electronics Corp.
AP4532GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
G2
S2
G1
S1
Description
AP4532 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
30V
50mΩ
5A
-30V
70mΩ
-4A
D2
The SO-8 package is widely preferred for all commercial-
G1
G2
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
S1
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
S2
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
30 -30
+20 +20
5 -4
4 -3.2
20 -20
2
0.016
V
V
A
A
A
W
W/℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201501093
1 page  
N-Channel
6
5
4
3
2
1
0
25 50 75 100 125 150
T A , Ambient Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
AP4532GM-HF
3
2
1
0
0 50 100 150
T A , Ambient Temperature ( o C)
Fig 6. Typical Power Dissipation
100
10
1
0.1
0.01
0.1
T A =25 o C
Single Pulse
1
V DS (V)
10
1ms
10ms
100ms
1s
10s
DC
100
1
Duty Factor = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
5
5 Page 
P-Channel
AP4532GM-HF
VDS
RD 90%
D
VDS
TO THE
OSCILLOSCOPE
RG G
0.33 x RATED VDS
-10 V
S
VGS
10%
VGS
td(on) tr
td(off) tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
D
G
S
-1~-3mA
I
G
VDS
VGS
I
D
TO THE
OSCILLOSCOPE
0.33 x RATED VDS
VG
-10V
QGS
QG
QGD
Charge
Q
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AP4532GM-HF.PDF ] | |
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