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PDF 1SS417CT Data sheet ( Hoja de datos )
| Número de pieza | 1SS417CT | |
| Descripción | Silicon Epitaxial Planar Type Diode | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS417CT
1SS417CT
High Speed Switching Application
Unit: mm
• Small package
• Low forward voltage: VF (3) = 0.56 V (typ.)
• Low reverse current: IR = 5 μA (max)
0.6±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
VRM
VR
IFM
IO
IFSM
P*
Tj
Tstg
Topr
45
40
200
100
1
100
125
−55 to 125
−40 to 100
V
V
mA
mA
A
mW
°C
°C
°C
* Mounted on a glass epoxy circuit board of 20 mm× 20 mm,
pad dimension of 4 mm× 4 mm.
0.38
+0.02
-0.03
0.5±0.03
0.05±0.03
CST2
JEDEC
―
JEITA
―
TOSHIBA
1-1P1A
Weight: 0.7 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1 mA
― IF = 10 mA
― IF = 100 mA
― VR = 40 V
― VR = 0 V, f = 1 MHz
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.56 0.62
― ― 5 μA
― 15 ― pF
Marking
X
Equivalent Circuit (Top View)
1 2009-01-08
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS417CT.PDF ] | |
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