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PDF DSEP29-06AS Data sheet ( Hoja de datos )
| Número de pieza | DSEP29-06AS | |
| Descripción | Epitaxial Diode | |
| Fabricantes | IXYS | |
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HiPerFREDTM Epitaxial Diode
with soft recovery
DSEP 29-06A DSEP 29-06AS
DSEP 29-06B
IFAV = 30 A
VRRM = 600 V
trr = 30/35 ns
VRSM
V
600
600
600
VRRM
V
600
600
600
Type
DSEP 29-06A
DSEP 29-06AS
DSEP 29-06B
AC
Symbol
IFRMS
IFAVM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
Md
Weight
Conditions
Maximum Ratings
rect., d = 0.5; TC (Version A, AS)= 135°C
TC (Version B) = 125°C
TVJ = 45°C; tp = 10 ms (50 Hz), sine; (Version A, AS)
(Version B)
35
30
30
250
200
A
A
A
A
A
TVJ = 25°C; non-repetitive
IAS = 1.3 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.2
0.1
-55...+175
175
-55...+150
mJ
A
°C
°C
°C
TC = 25°C
mounting torque (Version A, B)
165
0.4...0.6
W
Nm
typical
2g
Symbol
Conditions
IR ①
VF ②
RthJC
RthCH
trr typ.
IRM typ.
TVJ = 25°C; VR = VRRM
TVJ = 150°C; VR = VRRM
IF = 30 A; TVJ = 150°C
TVJ = 25°C
typ.
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 50 A;
-diF/dt = 100 A/µs; TVJ = 100°C
Characteristic max. Values
Version A Version B
250 250 µA
1 2 mA
1.26
1.61
1.58 V
2.52 V
0.9 0.9 K/W
0.5 0.5 K/W
35 30 ns
6 4A
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
TO-220 AC
C
A C (TAB)
TO-263
A C (TAB)
A
A = Anode, C = Cathode, TAB = Cathode
Features
International standard package
• Planar passivated chips
• Very short recovery time
l Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-onlossinthecommutatingswitch
Dimensions see Outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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