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PDF AM2329P Data sheet ( Hoja de datos )
| Número de pieza | AM2329P | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
AM2329P
P-Channel 30V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low rDS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical
applications are power switch, power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
• Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Low Gate Charge
• Fast Switch
• Miniature SOT-23 Surface Mount Package
Saves Board Space
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
-30 0.112 @ VGS = 10 V
0.172 @ VGS = 4.5V
G
S
ID (A)
2.5
2.0
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
-30
±20
V
2.5
1.7 A
±12
Continuous Source Current (Diode Conduction)a
IS 1.25 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
1.3
0.8
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 5 sec
Steady-State
Symbol
RT HJA
Maximum Units
100
166
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
April, 2004 - Rev. A
PRELIMINARY
1 Publication Order Number:
DS-AM2329_B
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AM2329P.PDF ] | |
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